COPPER ALLOY FOR ELECTRONIC/ELECTRIC DEVICE, COPPER ALLOY THIN PLATE FOR ELECTRONIC/ELECTRIC DEVICE, METHOD OF PRODUCING COPPER ALLOY FOR ELECTRONIC/ELECTRIC DEVICE, CONDUCTIVE COMPONENT FOR ELECTRONIC/ELECTRIC DEVICE AND TERMINAL

摘要

What is provided is a copper alloy for electronic/electric device comprising: in mass %, more than 2.0% and 36.5% or less of Zn; 0.1% or more and 0.9% or less of Sn; 0.05% or more and less than 1.0% of Ni; 0.001% or more and less than 0.10% of Fe; 0.005% or more and 0.10% or less of P; and the balance Cu and inevitable impurities, wherein a content ratio of Fe to Ni, Fe/Ni, in atomic ratio satisfies 0.002≤Fe/Ni1.5, a content ratio of a sum of Ni and Fe, (Ni+Fe), to P, in atomic ratio satisfies 3(Ni+Fe)/P15, a content ratio of Sn to a sum of Ni and Fe, (Ni+Fe), in atomic ratios satisfies 0.3Sn/(Ni+Fe)5, an average crystal grain diameter of a matrix of the copper alloy, which is mainly α phase containing Cu, Zn, and Sn is in a range of 0.1 to 50 µm, the copper alloy includes precipitates containing P and one or more elements selected from Fe and Ni, and a ratio of sampling points having a Confidence Index (CI) value of 0.1 or less is 70% or less in the α phase, the CI value being acquired by measuring an area of not smaller than 1000 µm² by EBSD method with 0.1 µm step intervals and analyzing the measurement data with an OIM data analysis software.