Process for the preparation of a dielectric barrier layer of silicon oxide (SiOx) layer and thus prepared

摘要

Process for the preparation of a dielectric barrier layer of silicon oxide (SiOx) on a substrate, for which is performed, after cleaning the substrate, deposition of a layer of SiOx by the technique of PECVD and other deposition SiOx by the sol-gel method. The coating composition (sol) used in step sol-gel is prepared from the following components: MTES, 30 to 50% by weight; TEOS, between 7% and 12% by weight; N, N'-DMS, between 11 and 19% by weight; PEG, between 19 and 31% by weight; distilled water between 7 and 12 wt% orthophosphoric acid, from 0.6% to 0.9% by weight. Once prepared the coating composition, it is deposited and densified to form the corresponding oxide layer.