Process for the preparation of a silicon oxide (SiOx) dielectric barrier layer and layer thus prepared

摘要

The invention relates to a method for preparing a dielectric barrier layer of silicon oxide (SiOx) on a substrate. Once the substrate is cleaned, the method involves depositing a layer of SiOx using the PECVD technique and depositing another layer of SiOx using the sol-gel method. The coating composition (sol) used in the sol-gel stage is prepared using the following components: between 30 and 50 wt.% MTES; between 7 and 12 wt.% TEOS; between 11 and 19 wt.% N,N-DMS; between 19 and 31 wt.% PEG; between 7 and 12 wt.% distilled water; and between 0.6 and 0.9 wt.% orthophosphoric acid. Once prepared, the coating composition is deposited and densified to form the corresponding oxide layer.