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SEMICONDUCTOR STRUCTURES INCLUDING MOLYBDENUM NITRIDE, MOLYBDENUM OXYNITRIDE OR MOLYBDENUM-BASED ALLOY MATERIAL, AND METHOD OF MAKING SUCH STRUCTURES
SEMICONDUCTOR STRUCTURES INCLUDING MOLYBDENUM NITRIDE, MOLYBDENUM OXYNITRIDE OR MOLYBDENUM-BASED ALLOY MATERIAL, AND METHOD OF MAKING SUCH STRUCTURES
A semiconductor structure may include a first electrode over a substrate, a high-K dielectric material over the first electrode, and a second electrode over the high-K dielectric material, wherein at least one of the first electrode and the second electrode may include a material selected from the group consisting of a molybdenum nitride (MoxNy) material, a molybdenum oxynitride (MoOxNy) material, a molybdenum oxide (MoOx) material, and a molybdenum-based alloy material comprising molybdenum and nitrogen.
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机译:半导体结构可以包括在衬底上方的第一电极,在第一电极上方的高K介电材料以及在高K介电材料上方的第二电极,其中第一电极和第二电极中的至少一个可以包括金属。选自氮化钼(Mo x Sub> N y Sub>)材料,氮氧化钼(MoO x Sub> N y Sub>)材料,氧化钼(MoO x Sub>)材料和包含钼和氮的钼基合金材料。
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