首页>
外国专利>
METHODS FOR UNIFORM IMPRINT PATTERN TRANSFER OF SUB-20 NM FEATURES
METHODS FOR UNIFORM IMPRINT PATTERN TRANSFER OF SUB-20 NM FEATURES
展开▼
机译:低于20海里特征的均匀印迹模式转移方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Methods of increasing etch selectivity in imprint lithography are described which employ material deposition techniques that impart a unique morphology to the multi-layer material stacks, thereby enhancing etch process window and improving etch selectivity. For example, etch selectivity of 50:1 or more between patterned resist layer and deposited metals, metalloids, or non-organic oxides can be achieved, which greatly preserves the pattern feature height prior to the etch process that transfers the pattern into the substrate, allowing for sub-20 nm pattern transfer at high fidelity.
展开▼