Method of structuring a device layer of a recessed semiconductor device and recessed semiconductor device comprising a structured device layer

摘要

A device layer of a recessed semiconductor device is structured by a method comprising the steps of providing a semiconductor substrate (1) with a device layer (2) having a surface (10), forming a recess (3) extending from the surface into the substrate, and structuring the device layer. A dry film (4) is applied on the surface of the device layer after forming the recess and before structuring the device layer, so that the dry film covers the recess. A resist layer (6) is applied on or above the dry film and is patterned into a resist mask. A dry film pattern is formed from the dry film according to the pattern of the resist mask. The device layer is structured using the dry film pattern as an etch mask.