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SUBSTRATE COMPRISING A LAYER OF SILICON AND/OR GERMANIUM AND ONE OR A PLURALITY OF NANOWIRES ORIENTED PERPENDICULAR TO THE SURFACE OF THE SUBSTRATE
SUBSTRATE COMPRISING A LAYER OF SILICON AND/OR GERMANIUM AND ONE OR A PLURALITY OF NANOWIRES ORIENTED PERPENDICULAR TO THE SURFACE OF THE SUBSTRATE
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机译:包含硅和/或锗的层以及垂直于该基质表面的一个或多个纳米线的基质
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摘要
The present invention concerns a substrate comprising a continuous or discontinuous layer of silicon and/or germanium consisting of one or a plurality of monocrystalline grains, and on said layer, one or a plurality of objects of varying shapes consisting of materials which require substrates having a crystalline orientation (111) suitable for the epitaxial growth of same. The invention also concerns a method for producing such a substrate.
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