ATOMIC LAYER DEPOSITION USING METAL AMIDINATES

摘要

A metal film is deposited to a uniform thickness and excellent step coverage. Copper and copper metal film on a heated substrate (I) N, N'- diisopropylethylamine is deposited by reaction of carbonate with steam-acetamido amidinyl shift hydrogen gas. Cobalt film on a heated substrate of cobalt (II) bis (N, N'- diisopropylcarbodiimide acetamidinium media carbonate) is deposited by a vapor reaction with hydrogen gas in turn. Nitrides and oxides of these metals can be formed by replacing the hydrogen of ammonia or water vapor respectively. Film has a very uniform thickness and excellent step coverage even small holes. Is a suitable application is used in microelectronics and electrical interconnection of the magnetoresistive layer in a magnetic data storage device. ;