首页> 外国专利> POLYCRYSTALLINE DIAMOND COMPACT HAVING MULTIPLEX SINTERED POLYCRYSTALLINE DIAMOND AND THE MANUFACTURING METHOD THEREOF

POLYCRYSTALLINE DIAMOND COMPACT HAVING MULTIPLEX SINTERED POLYCRYSTALLINE DIAMOND AND THE MANUFACTURING METHOD THEREOF

机译:具有多重烧结的多晶金刚石复合片的多晶金刚石复合片及其制造方法

摘要

The present invention relates to a composite polycrystal-diamonds, with a polycrystalline diamond sintered body and manufacturing method, a kind of method for manufacturing the composite polycrystal-diamond including polycrystalline diamond sintered body according to the present invention includes: a first order of the first diamond dust of preparation; It is sintered a second step of blocking first diamond dust under a pressure condition of 5 to 6 GPa and 1300 to 1500 temperature manufactures the first polycrystalline diamond sintered body, there is the diameter smaller diameter than cemented carbide substrate; One third step places the first polycrystalline diamond sintered body in the middle section in cemented carbide substrate and assembles the second diamond dust around the first polycrystalline diamond sintered body; It is sintered in the case where 5 to 6 GPa and a temperature that pressure is 1300 to 1500, the body. of second polycrystalline diamond sintering is made with the second diamond dust of tableAccording shapes are to existing invention, and the outside of internal sintering and polycrystalline diamond sintered body is in progress respectively, so that the sintered body of polycrystalline diamond sintered body can be manufactured to have identical sintering characteristic.
机译:本发明涉及一种具有多晶金刚石烧结体的复合多晶金刚石及其制造方法,一种根据本发明的包括多晶金刚石烧结体的复合多晶金刚石的制造方法,包括:金刚石粉的制备;在5〜6GPa的压力条件下,1300〜1500℃的温度下烧结第二阻挡第一金刚石粉尘的第二步骤,制造出第一多晶金刚石烧结体,其直径小于硬质合金基体的直径。第三步,将第一多晶金刚石烧结体置于硬质合金基体的中间部分,并在第一多晶金刚石烧结体周围聚集第二金刚石粉尘。在5〜6 GPa,压力为1300〜1500℃的温度的情况下进行烧结。用表中的第二金刚石粉制成第二种多晶金刚石烧结体,根据现有发明的形状,分别进行内部烧结和多晶金刚石烧结体的外部加工,从而可以制造出多晶金刚石烧结体的烧结体。具有相同的烧结特性。

著录项

  • 公开/公告号KR20150091912A

    专利类型

  • 公开/公告日2015-08-12

    原文格式PDF

  • 申请/专利权人 ILJIN DIAMOND CO. LTD.;

    申请/专利号KR20140012726

  • 发明设计人 CHOI DONG IK;

    申请日2014-02-04

  • 分类号C04B35/52;B23B27/20;C04B35/64;

  • 国家 KR

  • 入库时间 2022-08-21 14:59:29

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