HIGH-QUALITY VANADIUM DIOXIDE FILM USING EPITAXIAL WAFER AND PREPARING METHOD THEREOF

摘要

The present invention relates to a method for synthesizing and preparing a high-quality VO_2 thin-film which can be used as a channel material in an optical device or an electronic device. A radio frequency (RF) sputtering method is used to synthesize the thin-film. The epitaxial wafer (GaN) in the group III-V is used as a substrate. According to the present invention, the synthesis method uses GaN having a grid structure similar to that of sapphire in order to synthesize the high-quality VO_2 thin-film. VO_2 thin-film also can control the conductivity rate through doping and be utilized in an electrode of the electronic device based on the VO_2 thin-film or in an optical device including GaN.;COPYRIGHT KIPO 2016