REVISION OF LAYOUT DESIGN THROUGH OPC TO REDUCE CORNER ROUNDING EFFECT

摘要

The present disclosure provides a method for fabricating a semiconductor device. A first layout design for a semiconductor device is received. The first layout design includes a plurality of gate lines and an active area overlapping the gate lines. The active area includes at least one angled corner disposed adjacent to at least one of the gate lines. The first layout design for the semiconductor device is revised through an optical proximity correction process (OPC), which allows the occurrence of a second layout design including a revision active region with a revision corner, protruding to the outside. Afterwards, the semiconductor device is manufactured based on the second layout design.;COPYRIGHT KIPO 2016