Revising layout design through OPC to reduce corner rounding effect

摘要

The present disclosure provides a method of fabricating a semiconductor device. A first layout design for a semiconductor device is received. The first layout design includes a plurality of gate lines and an active region that overlaps with the gate lines. The active region includes at least one angular corner that is disposed adjacent to at least one of the gate lines. The first layout design for the semiconductor device is revised via an optical proximity correction (OPC) process, thereby generating a second layout design that includes a revised active region with a revised corner that protrudes outward. Thereafter, the semiconductor device is fabricated based on the second layout design.