首页> 外国专利> METHOD FOR MANUFACTURING SINTERED BULK OF RAW MATERIALS, AND GROWING NETHOD FOR SINGLE CRYSTAL USING SINTERED BULK

METHOD FOR MANUFACTURING SINTERED BULK OF RAW MATERIALS, AND GROWING NETHOD FOR SINGLE CRYSTAL USING SINTERED BULK

机译:原材料的烧结块的制造方法以及烧结块的单晶生长方法

摘要

The present invention relates to a method for manufacturing a raw sintered bulk and to a method for growing a single crystal using a sintered bulk. The present invention comprises: a raw material inserting step of inserting raw materials into an inner space of a crucible; an impurity removing step of removing impurities included in the crucible by heating the crucible at a first set temperature and a second set pressure for a first set time; a pressure increasing step of increasing the pressure of the inner space of the crucible to a second set pressure; a heating step of heating the crucible at a second set temperature by using a heating means while maintaining the inner space of the crucible at the second set pressure after the pressure increasing step; and a sintering step of forming a sintered bulk by sintering the raw materials while maintaining the crucible at the second set pressure for a second set time after the heating step.
机译:烧结块的制造方法以及使用该烧结块的单晶生长方法技术领域本发明涉及一种烧结块的制造方法以及使用该烧结块的单晶生长方法。本发明包括:原料插入步骤,其将原料插入到坩埚的内部空间中;以及杂质去除步骤,通过在第一设定温度和第二设定压力下将坩埚加热第一设定时间来去除坩埚中包含的杂质;压力增加步​​骤,将坩埚的内部空间的压力增加到第二设定压力;加热步骤,其在压力增加步​​骤之后通过使用加热装置将坩埚加热到第二设定温度,同时将坩埚的内部空间保持在第二设定压力。在烧结工序之后,将坩埚在第二设定压力下保持第二设定时间并进行烧结,由此形成烧结块。

著录项

  • 公开/公告号KR101480491B1

    专利类型

  • 公开/公告日2015-01-12

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20120157321

  • 申请日2012-12-28

  • 分类号C01B31/36;B01J6;C30B29/36;C30B23;

  • 国家 KR

  • 入库时间 2022-08-21 14:58:51

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