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Cu or Cu/Mo or Cu/Mo alloy electrode etching liquid in Liquid Crystal Display system

机译:液晶显示系统中的Cu或Cu / Mo或Cu / Mo合金电极蚀刻液

摘要

The present invention, the total weight of the composition of 12 to 35% by weight, based on the hydrogen peroxide, 0.5 to 5 wt. % of sulfate, 0.5 to 5% by weight of phosphate, 0.0001 to 0.5% by weight of fluoride that can provide fluoride ions, 0.1 to 5% by weight of a first water-soluble cyclic amine, from 0.1 to 5% by weight of a chelating agent, 0.1 to 5% by weight of the second water-soluble cyclic amine, from 0.1 to 5% by weight of the total composition of glycol total weight of the copper film containing deionized water such that 100% by weight, a copper / molybdenum having nyummak or copper / molybdenum relates to an etching composition denyum alloy film. ; In another aspect, the present invention constituting the gate TFT (Thin Film Transistor) of a liquid crystal display (Gate), the source (Source) and drain (Drain) electrode metal characterized in that the copper layer used in the etching process of the wiring, copper / mol relates to nyummak or copper / molybdenum alloy film etching composition having ribs. ; etch composition, copper, copper / molybdenum, a liquid crystal display
机译:本发明的组合物的总重量为12至35重量%,基于过氧化氢为0.5至5重量%。可以提供氟离子的硫酸根,0.5%至5%,磷酸盐的0.5%至5%,0.0001%至0.5%的氟化物,0.1%至5%的第一水溶性环胺,0.1%至5%的重量螯合剂,第二水溶性环胺的0.1-5重量%,占去离子水的铜膜的总乙二醇总重量的0.1-5重量%,使得100重量%的铜膜纽莫克或铜的钼/钼涉及蚀刻组合物alloy合金膜。 ;在另一方面,构成液晶显示器(栅极)的栅极TFT(薄膜晶体管),源极(源极)和漏极(漏极)金属的本发明的特征在于,在蚀刻过程中使用的铜层布线,铜/摩尔涉及具有肋的纽玛克或铜/钼合金膜蚀刻组合物。 ;蚀刻成分,铜,铜/钼,液晶显示器

著录项

  • 公开/公告号KR101495683B1

    专利类型

  • 公开/公告日2015-02-26

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20080094504

  • 发明设计人 이태형;백귀종;

    申请日2008-09-26

  • 分类号C09K13/08;

  • 国家 KR

  • 入库时间 2022-08-21 14:58:36

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