首页> 外国专利> METHOD OF MANUFACTURING SUBSTRATE SET FOR MASKBLANK, METHOD OF MANUFACTURING MASKBLANK SET, METHOD OF MANUFACTURING PHOTOMASK SET, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SUBSTRATE SET FOR MASKBLANK, METHOD OF MANUFACTURING MASKBLANK SET, METHOD OF MANUFACTURING PHOTOMASK SET, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

机译:制造Masklank的基体的方法,制造Masklank的方法,制造光掩模组的方法以及制造半导体器件的方法

摘要

The substrate set is a substrate set for a mask blank in which a plurality of sets of substrates used as a mask blank for manufacturing a photomask chucked to a mask stage of an exposure apparatus. The substrate used as a plurality of sets is a convex shape in which the shape of the main surface on the side where the thin film forming the transfer pattern is provided is relatively high at the center and relatively low at the periphery. In each of the substrates, the flatness in a 142 mm square area including the central part of the main surface is 0.3 m or less, and the difference when fitting to the reference main surface of the reference substrate is 40 nm or less.
机译:基板组是用于掩模坯料的基板组,其中,用作掩模坯料的多组基板被用于制造被夹持到曝光设备的掩模台的光掩模。用作多组的基板是凸形,其中设置有形成转印图案的薄膜的一侧上的主表面的形状在中央相对较高,而在周边相对较低。在每个基板中,在包括主表面的中央部分的142mm见方的区域中的平坦度为0.3m或更小,并且当装配到参考基板的参考主表面时的差为40nm或更小。

著录项

  • 公开/公告号KR101522295B1

    专利类型

  • 公开/公告日2015-05-21

    原文格式PDF

  • 申请/专利权人 호야 가부시키가이샤;

    申请/专利号KR20120049683

  • 发明设计人 타나베 마사루;

    申请日2012-05-10

  • 分类号G03F1/20;H01L21/027;

  • 国家 KR

  • 入库时间 2022-08-21 14:58:11

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