GROUP 13 NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL SUBSTRATE, AND METHOD OF MANUFACTURING GROUP 13 NITRIDE CRYSTAL

摘要

the present invention is selected from the group consisting of B, Al, Ga, In and Tl It will be of the metal atom with the nitrogen atom of at least one nitride crystal 13 having a hexagonal crystal structure which contains at least. The dislocation density in the basal plane dislocations in the parallel section with respect to the c-axis is 10 ⁴ cm ^-2 is over. ;