INTERNAL REFORMING SUBSTRATE FOR EPITAXIAL GROWTH, INTERNAL REFORMING SUBSTRATE WITH MULTILAYER FILM, SEMICONDUCTOR DEVICE, BULK SEMICONDUCTOR SUBSTRATE, AND PRODUCTION METHODS THEREFOR

摘要

any curved shape and / or curved state amounts to having the epitaxial growth for internal reforming a substrate, a multilayer film formed by using this modified substrate inside the semiconductor device, and the semiconductor bulk substrate, and to provide a method for producing them. And a single crystal substrate, an internal reforming a substrate for epitaxial growth, including thermal deformation layer is formed on the inside of the single crystal substrate by laser irradiation of the single crystal substrate. ;