Method of manufacturing multilayer thin film and magnetic tunnel junction structure including the multilayer thin film

摘要

It provides a method for producing a multi-layer film, and whereby the MTJ structure including a multi-layer film is manufactured. A multi-layer film production method and a second ferromagnetic material stage, on the crystallization assisting layer forming a crystallization assisting layer including an oxide-based material layer containing an oxide-based material on a substrate a first ferromagnetic material as a main element heat-treating the multi-layer thin film formed on the crystallization assisting layer and a step of forming a multi-layered thin film includes the step of crystallizing the multi-layer film. Therefore, the heat treatment temperature used in the process of physical memory devices may provide a method for producing a multi-layer film with a high perpendicular magnetic anisotropy. ;