METHOD FOR FORMING P-N JUNCTION OF TWO DIMENSIONAL MATERIAL USING FERROELECTRIC MATERIALS AND TWO DIMENSIONAL MATERIAL WITH P-N JUNCTION USING FERROELECTRIC MATERIALS

摘要

The present invention relates to a method for forming a p-n junction of a two dimensional structural material using a ferroelectric substance, and a two dimensional structural material with a p-n junction using a ferroelectric substance. The purpose of the present invention is to provide a p-n junction structure using a ferroelectric substrate containing an area, where an anode/a cathode are crossed and arranged, by improving a structure according to the existing technology wherein external voltage should be continuously maintained through the existing structure of two separated gate electrodes with respect to electrostatic doping of a two dimensional material with ambipolar properties. Furthermore, the purpose of the present invention is to provide a p-n junction-based electronic device which is transparent and bendable.