VOID-FREE COPPER FILLING OF RECESSED FEATURES USING A SMOOTH NON-AGGLOMERATED COPPER SEED LAYER

摘要

copper agglomeration on a substrate and the control integrated circuit in the recess without voids bulk copper metal It provides a method for charging a. In one embodiment, the method comprises the steps of: providing a substrate having a topography including at least one concave portion and the top surface including at least a sidewall surface and a bottom surface, comprising: depositing a barrier on the substrate topography and The barrier layer includes depositing a metal-containing wetting film on the. The method further comprising the step of depositing a copper metal on the metal-containing wetting film, and the substrate temperature is high enough to form a smooth copper metal seed layer on the metal-containing wetting film. At least one recess has a bulk copper metal is plated without pores. ;