METHOD FOR PRODUCING A SENSOR vacuum nanostructures based MIXED OXIDE SEMICONDUCTOR AND VACUUM GAUGE ON THE BASIS OF ITS

摘要

1. A method of manufacturing the vacuum sensor with the nanostructure based mixed oxide semiconductor, comprising the steps that form a heterostructure of different materials, in which a semiconductor thin film resistor formed, whereupon it is fixed in the sensor housing, and contact pads connected to the pin housing by means of contact conductors, characterized in that the semiconductor thin film resistor is formed as a net-like nanostructure (SiO) (SnO) (InO) based mixed semiconducting oxides, Massa Stake component which before it is determined (set) in the range of 0% ≤c≤20%, by applying the orthosilicic acid sol comprising tin hydroxide and indium on a substrate of silicon with a centrifuge and subsequent annealing, which is prepared in two stages, in the first step is mixed, tetraethoxysilane and ethyl alcohol, then in the second phase the resulting solution is added distilled water, hydrochloric acid (HCl), stannous chloride dihydrate (SnCl · 2HO), 4,5-aqueous indium nitrate (in (NO) · 4 5HO) wherein the mass fraction of a component in the range of 0% ≤c≤20 determine m (set) on the basis of the concentration of indium dioxide (InO) the sensitivity S by the relation: where S -% sensitivity which is set in the range of 16.74% to 47.36%; c - InOv% mass fraction, and the required volume Vtetraetoksisilana volume of ethanol (V), volume of distilled water (V), tin chloride dihydrate mass (SnCl · 2HO), 4.5 weight-aqueous indium nitrate (In (NO) · 4 , 5HO) for the preparation of orthosilicic acid sol comprising tin and indium hydroxide is determined by the relations: somewhere weight of tin dioxide (SnO) in mg; c - the mass fraction of indium oxide (InO) in% - m