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RESEARCH METHOD OF NONLINEAR SPIN RESONANCE IN SEMICONDUCTORS AND DEVICE FOR ITS IMPLEMENTATION

机译:半导体中非线性自旋共振的研究方法及其实现方法

摘要

FIELD: nanotechnology.;SUBSTANCE: use: for research of nonlinear spin resonance in bulk, thin film and two-dimensional semiconductor nanostructures. The essence of the invention consists in the fact that for research of nonlinear spin resonance the sample is cooled, affected with changing constant and weak alternating magnetic field that changes with sound frequency Ω, the sample is affected with two coherent radiations: the powerful pump radiation and weak test radiation, having the right circular polarization, the signal is registered, which is proportional to the second derivative of the power of the test radiation at a frequency of 2Ω, the resonant magnetic field is determined, the shape of curve of the nonlinear spin resonance is studied, the aligned coherent radiations are directed parallel to the constant magnetic field, the g-factor of the semiconductor under study is determined.;EFFECT: ensuring the possibility of determining the parameters of the energy zones in thin-film and two-dimensional semiconductor nanostructures.;2 cl, 1 dwg
机译:领域:纳米技术;物质:用途:用于研究体,薄膜和二维半导体纳米结构中的非线性自旋共振。本发明的实质在于,为了研究非线性自旋共振,将样品冷却,受到变化的恒定和弱交变磁场的影响,该交变磁场随声频Ω而变化,该样品受到两个相干辐射的影响:强泵浦辐射并记录具有右圆偏振的弱测试辐射,该信号与频率为2Ω的测试辐射功率的二阶导数成比例,确定共振磁场,非线性曲线的形状研究自旋共振,对准对准的相干辐射平行于恒定磁场,确定所研究半导体的g因子。效果:确保确定薄膜和两个能量区参数的可能性维半导体纳米结构。; 2 cl,1 dwg

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