METHOD OF SYNTHESISING NANOCRYSTALLINE SILICON CARBIDE

摘要

FIELD: chemistry.;SUBSTANCE: method includes the plasmodynamic synthesis of silicon carbide in a hypervelocity jet of an electric discharge plasma, which contains silicon and carbon in a ratio of 3.0:1, generated by a coaxial magnetic-plasma accelerator with graphite electrodes and directed into a closed volume, filled with gaseous argon under normal pressure and a temperature of 20°C, with the temperature of gaseous argon in the closed volume being changed in the range from -20°C to 19°C and from 21°C to 60°C.;EFFECT: regulation of nanocrystalline silicon carbide dispersion.;1 dwg, 1 tbl