Magnetic random access memory device (mram) with non-parallel main - and - magneto resistors reference numerals

摘要

Magnet structure with a random access memory device with a main cells zone (a1, a2) and a reference cells zone (b) cells adjacent to the main zone, the magnet structure with a random access memory device comprising:a plurality of main magnet resistors (40a), the cells in the main zone (a1, a2) along of rows and columns are arranged, wherein each of the main magnet resistors (40a) a first width and has a first length, and specifically seen in the form of plan view; anda plurality of reference magnet resistors (40b), which in the reference cells zone (b) are arranged along a column, wherein each of the reference magnet resistors (40b) a second width and a second length, a length direction of the main magnet resistors (40a) a length direction of the reference magnet resistors (40b) in an angle of 90°, wherein:the first and the second length are greater than each of the first and the second width, and wherein each of the main magnet resistors (40a) and the reference magnet resistors (40b) a rectangular shape or an oval shape, viewed in plan view.