Method and device for controlling a magnetron sputtering process

摘要

The invention relates to a method for controlling a gas flow in a magnetron sputtering process in a vacuum space in which a magnetron is arranged and in which a process gas is introduced, wherein the process gas is formed from a first process gas part and at least a second process gas part and in which a Controlled variable from the vacuum chamber is detected as a controlled system in a measuring element and processed in a computing unit such that according to a control deviation, the magnetron sputtering process supplied amount of a process gas part is set, and an associated device. The object of the invention to provide a measurement criterion which corresponds to the reactive gas partial pressure to be monitored and can be used for regulation, whereby a long-term drift or jumps by switching the measuring system off and on can be prevented or significantly reduced, is achieved by means of a mass spectrometer Partialdruck a first process gas part and a partial pressure of at least a second process gas part is measured, from which a calculation value is formed, which is used as a control variable for controlling a process gas flow as a control variable.