Method for producing a substrate, substrate, metal-oxide-semiconductor field effect transistor with a substrate, microelectromechanical system with a substrate, and motor vehicle

摘要

The present invention relates to a method for producing a substrate, a metal-oxide-semiconductor field effect transistor having a substrate, a microelectromechanical system having a substrate, and a motor vehicle. In this case, the substrate comprises a silicon carbide layer (10). The method of fabricating a substrate for a metal-oxide-semiconductor field effect transistor or a micro-electro-mechanical system comprises the steps of: (a) dry etching a preliminary trench into the substrate using a patterned first masking layer, wherein the dry etching is performed so that a remainder (60 ') of the first patterned masking layer remains, (b) applying a second masking layer (65) at least on walls of the preliminary trench, and (c) dry etching using the remainder (60') of the first masking layer and the second masking layer Digging with a step created in the trench.