Epitaxial technique for reducing of screws located under tension dislocations in half conductor composite materials

摘要

A solution for producing a semiconductor structure is provided. The semiconductor structure comprises a plurality of semiconductor layers, which, using a set of epitaxial growth periods are grown by means of a substrate. During each epitaxial growth period, a first semiconductor layer with any one of: a tensile stress or a having compressive stress, followed by the growth of a second semiconductor layer with the other from: the tensile stress or of the directly on the first semiconductor layer having compressive stress. One or more of a set of growth conditions, a thickness of one or two layers and / or a lattice mismatch between the layers can be adjusted, in order to provide a target elevation of the compression - and / or shear stress within a minimum percent region of the interface between the planes.