A process for chemically - mechanical polishing of silicon wafers

摘要

It is a method for polishing a silicon wafer is provided, comprising: providing a silicon wafer, providing a polishing pad with a polishing layer the reaction product of output material components, comprising: a polyfunctional isocyanate and a curing agent container, wherein the curing agent container an amine - initiated polyol - curing agent and a polyol - curing agent having a high molecular weight, the polishing layer comprising a density of more than 0,4 g / cm³, a shore d - hardness of from 5 to 40, an elongation at break of from 100 to 450% and a removal rate of 25 to 150 μm / hour, and wherein the polishing layer has a polishing surface, which is adapted for the polishing of the silicon wafer, and generating a dynamic contact between the polishing surface and the silicon wafer.