Process for producing solar cells with simultaneously etched-back doped regions

摘要

A method for producing a solar cell is described, in which a plurality of doping regions are to be etched back selectively or in a planar manner. After a semiconductor substrate (1) has been provided, different doping regions (3, 5) are formed in partial regions of a surface of the semiconductor substrate, wherein the different doping regions (3, 5) differ with regard to their doping concentration and / or their doping polarity. Subsequently, the various doping regions (3, 5) are selectively etched back to achieve desired doping profiles, and finally electrical contacts (21) are formed at least at some of the doping regions (3, 5). The etching back of the different doping regions takes place in a common etching in an etching medium. In order to enable such a common etching back of different doping regions (3, 5), it is proposed to specifically set properties of the initially unetched doping regions (3, 5) as well as parameters influencing the etching process with respect to properties of the desired doping profiles within the etched doping regions.