METHOD OF WRITING AND READING A DELEGALLY PROGRAMMABLE AND DELEGALLY MULTI-LEVEL DEAD MEMORY AND CORRESPONDING MEMORY DEVICE

摘要

During a programming phase of the cell, a first voltage (Vs1) is applied (21) to the source region, a second voltage (Vd2) is applied (22) to the drain region, greater than the first voltage, until to put the cell (CEL) in conduction, the numerical value (ddj) of the data (DD) to be written being controlled by the level of the control voltage (VCGj) applied (20) on the control gate and said data being de facto written with said numerical value during said turning on of the cell, the programming then being stopped (24).