首页> 外国专利> PZT-based ferroelectric thin film-forming composition, method of preparing the same, and method of forming PZT-based ferroelectric thin film using the same

PZT-based ferroelectric thin film-forming composition, method of preparing the same, and method of forming PZT-based ferroelectric thin film using the same

机译:基于PZT的铁电薄膜形成组合物,其制备方法以及使用该组合物形成基于PZT的铁电薄膜的方法

摘要

In a PZT-based ferroelectric thin film-forming composition, a ratio of a PZT precursor to 100 wt% of the composition is 17 to 35 wt% in terms of oxides, a of a diol to 100 wt% of the composition is 16 to 56 wt%, a ratio of a polyvinyl pyrrolidone or a polyethylene glycol to 1 mol of the PZT precursor is 0.01 to 0.25 mol in terms of monomers, a ratio of the water to 1 mol of the PZT precursor is 0.5 to 3 mol, and the composition does not further contain a linear monoalcohol having 6 to 12 carbon chains which has a ratio of 0.6 to 10 wt% with respect to 100 wt% of the composition.
机译:在基于PZT的铁电薄膜形成组合物中,以氧化物计,PZT前体相对于100重量%的组合物的比例为17〜35重量%,二醇相对于100重量%的二醇的比例为16〜15重量%。在单体中,相对于1摩尔的PZT前体,聚乙烯吡咯烷酮或聚乙二醇的比例为56重量%,0.01〜0.25摩尔,相对于1摩尔的PZT前体,水的比例为0.5〜3摩尔。该组合物不进一步包含具有6至12个碳链的直链一元醇,相对于该组合​​物100重量%,该直链一元醇的比例为0.6至10重量%。

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