A silicon-germanium, quantum-well, light-emitting diode (120). The light-emitting diode (120) includes a p-doped portion (410), a quantum-well portion (420), and an p-doped portion (430). The quantum-well portion (420) is disposed between the p-doped portion (410) and the n-doped portion (430). The quantum- well portion (420) includes a carrier confinement region that is configured to facilitate luminescence with emission of light (344) produced by direct recombination (340) of an electron (314) with a hole (324) confined within the carrier confinement region. The p-doped portion (410) includes a first alloy of silicon-germanium, and the n-doped portion (430) includes a second alloy of silicon-germanium.
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