Semiconductor structure for a radiation detector based on the avalanche effect and radiation detector

摘要

A semiconductor structure (100) comprises a substrate (12) comprising a semiconductor material of a first conductivity type; a semiconductor substrate (14) provided with a semiconductor layer; doping regions (13) of a second conductivity type; an additional doping region (15) provided in the semiconductor substrate and assigned to doping regions; and a cover layer (10) that is provided on the semiconductor substrate and of the second conductivity type, where an avalanche area (44), which is an area of high electrical field strength. A semiconductor structure (100) comprises: (A) a substrate (12) comprising a semiconductor material of a first conductivity type; (B) a semiconductor substrate (14) provided with a semiconductor layer provided on the substrate and having a higher resistance in comparison to the substrate, of the first conductivity type, and electrically doped with a doping concentration; (C) doping regions (13) provided in the semiconductor substrate and separated from each other, of a second conductivity type that is opposite from the first conductivity type, and electrically doped with a doping concentration that is higher than the doping concentration in the semiconductor substrate; (D) an additional doping region (15) provided in the semiconductor substrate and assigned to doping regions, of the first conductivity type, and electrically doped with a doping concentration that is higher than the doping concentration in the semiconductor substrate; and (E) a cover layer (10) that is provided on the semiconductor substrate and of the second conductivity type, where an avalanche area (44), which is an area of high electrical field strength, is provided in the semiconductor substrate between the doping regions provided herein and the cover layer provided on the semiconductor substrate, in which free charge carriers are replicated during operation due to collisions, where a quench area is provided in the semiconductor substrate between the doping regions.