MECHANICAL ENHANCER ADDITIVES FOR LOW DIELECTRIC FILMS

摘要

Preparation of an organosilicate glass film involves applying energy to a mixture of silicon-containing precursor comprising 3 - 4 Si-O bonds and silicon-containing precursor comprising at least one Si-C bond per Si atom or a mixture comprising an asymmetric silicon-containing precursor having a number ratio of less than 1 for Si-C bonds. Preparation of an organosilicate glass film having a dielectric constant of = 4 involves: (a) introducing either a mixture of a first silicon-containing precursor comprising 3 - 4 Si-O bonds and optional Si-H, Si-Br or Si-Cl bonds per Si atom and no Si-C bonds, and a second silicon-containing precursor comprising at least one Si-C bond per Si atom; or a mixture comprising an asymmetric silicon-containing precursor having a number ratio of Si-C bonds to Si atoms that is less than 1, into a reaction chamber with a substrate; and (b) applying energy to the mixture to induce reaction and deposit the organosilicate glass film on the substrate.