PRECURSOR SOLUTION, LAYER CONTAINING SILICON CARBIDE, POWER SEMICONDUCTOR ELEMENT, AND METHOD FOR MANUFACTURING POWER SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a material for reducing contact resistance in a power semiconductor element, and also to provide a power semiconductor element capable of reducing the contact resistance.;SOLUTION: A power semiconductor element comprises an intermediate layer 10 including silicon carbide containing an n- or p-type dopant, silicon (Si), and carbon (C) between a contact layer 20 to which a metal wiring 30 is connected and an impurity region composed of an n- or p-type semiconductor region formed in a silicon carbide crystal.;SELECTED DRAWING: Figure 5;COPYRIGHT: (C)2016,JPO&INPIT