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SUBSTRATE PROCESSING DEVICE, GAS DISPERSION UNIT, AND PRODUCTION DEVICE AND PROGRAM OF SEMICONDUCTOR DEVICE

机译:基板处理装置,气体分散装置,生产装置以及半导体装置的程序

摘要

PROBLEM TO BE SOLVED: To improve characteristics of a film formed on a substrate and to improve production throughput.;SOLUTION: A gas dispersion unit includes: a processing chamber for processing a substrate; a substrate platform on which the substrate is placed; a first supply region facing the substrate and in which a first dispersal hole for supplying first gas and a second dispersal hole for supplying second gas are provided; and a second supply region facing an outer circumference side face from the face on which the substrate on the platform is mounted, which supplies the second gas with a larger hole diameter than the second dispersal hole.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2016,JPO&INPIT
机译:解决的问题:为了改善在基板上形成的膜的特性并提高生产通量。解决方案:气体分散单元包括:处理室,用于处理基板;在其上放置基板的基板平台;在面对基板的第一供给区域中,设置有用于供给第一气体的第一分散孔和用于供给第二气体的第二分散孔。 ;和第二供给区域,其从其上安装有平台的基板的表面面向外周侧面,该第二供给区域以比第二分散孔大的孔径供给第二气体。 C)2016,日本特许厅

著录项

  • 公开/公告号JP2016128593A

    专利类型

  • 公开/公告日2016-07-14

    原文格式PDF

  • 申请/专利权人 HITACHI KOKUSAI ELECTRIC INC;

    申请/专利号JP20150003170

  • 发明设计人 NISHIDO SHUHEI;

    申请日2015-01-09

  • 分类号C23C16/455;H01L21/31;H01L21/324;H01L21/02;H01L21/28;H01L21/22;H01L21/223;H01L21/285;

  • 国家 JP

  • 入库时间 2022-08-21 14:47:23

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