POLYCRYSTALLINE ALUMINUM NITRIDE BASE MATERIAL FOR GROWING GaN BASED SEMICONDUCTOR CRYSTAL AND MANUFACTURING METHOD OF GaN BASED SEMICONDUCTOR USING THE SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a polycrystalline aluminum nitride substrate effective for crystal growing a GaN and GaN based semiconductor crystal using the polycrystalline aluminum nitride substrate.SOLUTION: A polycrystalline aluminum nitride base material 1 is a substrate material for grain growth of a GaN based semiconductor. A method of growing the GaN based semiconductor on a substrate using the polycrystalline aluminum nitride substrate, the substrate including a sintering additive component of 1-10 mass%, having a thermal conductivity of 150 W/mK or more, not having a concavity part with a maximum diameter of more than 200 μm on a substrate surface, having a substrate diameter L of 50 mm or more, having a skewness of -0.5-+0.5 on the substrate surface, and having a substrate 1 of which surface roughness (Ra) of 0.1 μm or less.SELECTED DRAWING: Figure 1