POLYCRYSTALLINE ALUMINUM NITRIDE BASE MATERIAL FOR GROWING GaN BASED SEMICONDUCTOR CRYSTAL AND MANUFACTURING METHOD OF GaN BASED SEMICONDUCTOR USING THE SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a polycrystalline aluminum nitride substrate effective for crystal growing GaN.SOLUTION: A polycrystalline aluminum nitride base material 1 is a substrate material for grain growth of a GaN based semiconductor. The base material includes a sintering additive component of 1-10 mass%, has a thermal conductivity of 150 W/m K or more, and does not have a concavity with a maximum diameter of more than 200 μm on the substrate surface.SELECTED DRAWING: Figure 1