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METHOD OF FORMING STRUCTURIZED COATING PART ON SUBSTRATE AND COATED SUBSTRATE

机译:在基体和涂层基体上形成结构化涂层部件的方法

摘要

PROBLEM TO BE SOLVED: To provide a method of improving a technique associated with formation of a structurized coating part on a substrate.SOLUTION: The present invention relates to a method of forming a structurized coating part on a substrate, the method including the steps of: preparing a substrate 1 having a surface to be coated; laminating a first layer 72 on the substrate; laminating a second layer 70 on the first layer; and laminating a third layer 71 on the second layer. The first, second and third layers are respectively formed by laminating vapor-deposited coating substances, the vapor-deposited coating substances being selected out of aluminum oxide, silicon dioxide, silicon nitride and titanium dioxide. In the method, a thermal vapor-deposition method for the vapor-deposited coating substances is implemented, and the second layer is structurized by an additive structurizing method, the thermal vapor-deposition method being implemented as plasma accelerated thermoelectron beam vapor deposition. Further, the vapor-deposited coating substances of the first layer has a lower optical refractive index than the vapor-deposited coating substances of the second layer, and the vapor-deposited coating substances of the third layer has a lower optical refractive index than the vapor-deposited coating substances of the second layer.SELECTED DRAWING: Figure 7
机译:解决的问题:提供一种改进与在基板上形成结构化涂层部件相关的技术的方法。解决方案:本发明涉及在基板上形成结构化涂层部件的方法,该方法包括以下步骤: :制备具有待涂覆表面的基板1;在基板上层压第一层72;在第一层上层压第二层70;在第二层上层压第三层71。第一层,第二层和第三层分别通过层压气相沉积的涂层物质而形成,该气相沉积的涂层物质选自氧化铝,二氧化硅,氮化硅和二氧化钛。在该方法中,实施用于气相沉积的涂覆物质的热气相沉积法,并且第二层通过添加剂结构化方法来结构化,该热气相沉积法被实施为等离子体加速热电子束气相沉积。此外,第一层的气相沉积的涂层物质具有比第二层的气相沉积的涂层低的光学折射率,并且第三层的气相沉积的涂层物质具有比蒸气的更低的光学折射率。沉积的第二层涂层物质。选定的图:图7

著录项

  • 公开/公告号JP2016166425A

    专利类型

  • 公开/公告日2016-09-15

    原文格式PDF

  • 申请/专利权人 MSG LITHOGLAS AG;

    申请/专利号JP20160086128

  • 发明设计人 JUERGEN LEIB;ULLI HANSEN;SIMON MAUS;

    申请日2016-04-22

  • 分类号C23C14/04;

  • 国家 JP

  • 入库时间 2022-08-21 14:46:28

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