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SEMICONDUCTOR PHOTOCATALYST AND ARTIFICIAL PHOTOSYNTHESIS DEVICE APPLYING THE SAME

机译:应用相同的半导体光催化剂和人工光合作用的装置

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor photocatalyst that can efficiently absorb a larger quantity of luminous energy.SOLUTION: The semiconductor photocatalyst has a heterojunction configured by a tunnel diode composed of a p-type silicon layer 1 and an n-type 3C-SiC layer 2. By using materials having two different band gaps as well as using the silicon layer 1 as a material having a narrow band gap, the obtained photocatalyst can absorb a wide wavelength range of sun rays. By obtaining a band configuration that covers an oxidation potential of water and a hydrogen reduction potential, artificial photosynthesis with high efficiency can be achieved.SELECTED DRAWING: Figure 1
机译:解决的问题:提供一种能够有效吸收大量光能的半导体光催化剂。解决方案:半导体光催化剂具有由由p型硅层1和n型3C-构成的隧道二极管构成的异质结。 SiC层2。通过使用具有两种不同带隙的材料以及将硅层1用作具有窄带隙的材料,所获得的光催化剂可以吸收宽波长范围的阳光。通过获得覆盖水的氧化电位和氢还原电位的能带结构,可以实现高效的人工光合作用。图1

著录项

  • 公开/公告号JP2016034611A

    专利类型

  • 公开/公告日2016-03-17

    原文格式PDF

  • 申请/专利权人 DENSO CORP;

    申请/专利号JP20140157892

  • 发明设计人 YAMAGUCHI HITOSHI;

    申请日2014-08-01

  • 分类号B01J35/02;B01J27/224;C01B3/04;C25B3/04;C25B1/10;C25B9;C25B1/04;C25B11/06;C07C31/04;C07C29/153;C07B61;

  • 国家 JP

  • 入库时间 2022-08-21 14:45:45

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