首页> 外国专利> METHOD FOR MANUFACTURING SELF-SUPPORTING COPPER THIN FILM

METHOD FOR MANUFACTURING SELF-SUPPORTING COPPER THIN FILM

机译:自支撑铜薄膜的制造方法

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a copper thin film, capable of efficiently manufacturing a self-supporting copper thin film having a lower resistance.;SOLUTION: The method for manufacturing a copper thin film comprises: a step S1 of forming the copper thin film having a film thickness of 2-30 μm on the surface of a substrate having a surface consisting of a ceramic material constituted of a compound of aluminum and/or silicon and at least one kind of elements selected from a group consisting of oxygen, nitrogen and carbon or carbon by setting a temperature of a vapor deposition source to 1200°C or more and circulating inert gas so as to be a total pressure of 0.001-10 Pa; and a step S2 of peeling the formed copper thin film in a thin film state from the surface of the substrate.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2017,JPO&INPIT
机译:解决的问题:提供一种能够有效地制造具有较低电阻的自支撑铜薄膜的铜薄膜的制造方法。解决方案:铜薄膜的制造方法包括:形成步骤S1在具有由铝和/或硅的化合物构成的陶瓷材料和选自由以下组成的组中的至少一种元素的衬底的表面上,膜厚度为2-30μm的铜薄膜:通过将蒸镀源的温度设定为1200℃以上并且使惰性气体循环以使总压力为0.001-10Pa,从而使氧,氮,碳或碳发生变化。步骤S2:将形成的铜薄膜以薄膜状态从基板表面剥离。图1;版权:(C)2017,日本特许经营&INPIT

著录项

  • 公开/公告号JP2016176104A

    专利类型

  • 公开/公告日2016-10-06

    原文格式PDF

  • 申请/专利权人 JX NIPPON OIL & ENERGY CORP;WASEDA UNIV;

    申请/专利号JP20150056753

  • 发明设计人 AOI SHIGEYOSHI;NODA SUGURU;

    申请日2015-03-19

  • 分类号C23C14/14;C23C14/58;C23C14/24;

  • 国家 JP

  • 入库时间 2022-08-21 14:44:49

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号