Single ring design for high yield and reduced edge defect in ICP plasma processing chamber

摘要

Embodiments of the present invention provide a single ring that includes a circular ring-shaped body having an inner surface proximate to the centerline of the body and an outer surface opposite the inner surface. The body has a bottom surface having slots formed therein, an outer end adjacent to the outer surface, and an upper surface having an inner end adjacent to a slope extending down to a step on the inner surface toward the centerline. The body has a lip disposed on an inner surface extending from a vertical surface below the step toward the centerline of the body and configured to support the substrate thereon. The body is sized to form a gap of less than about 2 mm on the lip between the substrate and the vertical surface of the step.