Tunneling junction solar cell with a shallow counter-doping layer in the substrate

摘要

An embodiment of the present invention provides a tunneling junction solar cell. The solar cell includes a base layer, an emitter layer located adjacent to the shallow counter-doping layer, a surface electric field layer located adjacent to the side of the base layer opposite to the shallow counter-doping layer, Including a front electrode and a rear electrode. The base layer includes a shallow counter-doping layer having a conductivity doping type opposite to the rest of the base layer. The emitter layer has a band gap that is larger than the band gap of the base layer. [Selection] Figure 1A