Internal stress evaluation method of the silicon carbide single crystal wafer, and the prediction method of the warping of the silicon carbide single crystal wafer

摘要

Provided are a method of evaluating an internal stress of a silicon carbide (SiC) single crystal wafer and a method of predicting warpage of the SiC single crystal wafer after completion of polishing by evaluating the internal stress of the wafer. Wavenumber shift amounts of Raman-scattered light are measured at two points within a surface of the SiC single crystal wafer, and the internal stress is evaluated through use of a difference between the wavenumber shift amounts. Also provided is a method of predicting warpage of a silicon carbide single crystal wafer in advance, the silicon carbide single crystal wafer being produced by a sublimation-recrystallization method, the method including predicting warpage of a SiC single crystal wafer through use of the evaluation indicator.