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Field electron emission film, field emission device, the light-emitting element and a method of manufacturing

机译:场电子发射膜,场发射器件,发光元件及其制造方法

摘要

PROBLEM TO BE SOLVED: To provide a field electron emission film capable of operating with low power, and exhibiting high uniformity of brightness in the light-emitting surface, and to provide a field electron emission element using the same, a light-emitting element, and their manufacturing method.SOLUTION: A field electron emission film contains 60-99.9 mass% of tin-doped indium oxide, and 0.1-20 mass% of carbon nanotubes, in which grooves having a width in a range of 0.1-50 μm are formed on the surface of the film, with a total extension of 2 mm or more per 1 mmand an area ratio of the groove part in a range of 2-60%. The field electron emission film has such a structure that carbon nanotubes are exposed on the wall surface of the grooves. After forming an ITO film containing carbon nanotubes on a substrate, grooves are formed on the surface of the ITO film, and the end part of the carbon nanotube exposed to the wall surface of the groove serves as an emitter.
机译:解决的问题:提供一种能够以低功率工作并且在发光表面上表现出高亮度均匀性的场电子发射膜,并且提供一种使用该场电子发射膜的发光元件,解决方案:场电子发射膜包含60-99.9质量%的锡掺杂氧化铟和0.1-20质量%的碳纳米管,其中沟槽的宽度在0.1-50μm的范围内。 m在膜的表面上形成,总延伸率为每1mm 2mm以上,并且凹槽部分的面积比在2-60%的范围内。场电子发射膜具有使得碳纳米管暴露在凹槽的壁表面上的结构。在基板上形成包含碳纳米管的ITO膜之后,在ITO膜的表面上形成凹槽,并且暴露于凹槽的壁表面的碳纳米管的端部用作发射极。

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