SAPPHIRE SINGLE CRYSTAL SUBSTRATE FOR EPITAXIAL GROWTH

摘要

PROBLEM TO BE SOLVED: To provide a sapphire single crystal substrate for epitaxial growth, which can suppress the capture by a polishing pad when a main surface is polished by applying the polishing pad to the main surface.;SOLUTION: A sapphire single crystal substrate for epitaxial growth, comprises: a first main surface; an end face; a tapered chamfer part formed between the first main surface and the end face; a portion different in the distance of the end part of the end face side of the chamfer part from the first main surface; and/or a portion different in the angle of the chamfer part. The maximum of the distance of the end part of the end face side of the chamfer part from the first main surface is 1.1 times or more of the maximum depth, in which the substrate dives in the polishing pad, and the angle between the chamfer part containing the first end part of the end face side of the chamfer part, in which the distance from the first main surface takes the maximum, and the first main surface is more than 25 degrees but less than 55 degrees. The angle between the chamfer part containing the second end part facing the first end part and the first main surface is more than 25 degrees but less than 65 degrees.;COPYRIGHT: (C)2016,JPO&INPIT