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Raw material gas supply device, a film forming apparatus, the raw material supply method and storage medium

机译:原料气体供给装置,成膜装置,原料供给方法及存储介质

摘要

A raw material gas supply method for use in a film forming apparatus which forms a film on a substrate, includes supplying a carrier gas to a gas phase zone defined inside a raw material container accommodating a liquid or solid raw material, vaporizing the raw material, supplying a raw material gas containing the vaporized raw material from the raw material container to the film forming apparatus via a raw material gas supply path, measuring a flow rate of the vaporized raw material flowing through the raw material gas supply path, comparing the flow rate of the vaporized raw material obtained by the flow rate measurement unit with a predetermined target value, and controlling an internal pressure of the raw material container to be increased when the flow rate is higher than the predetermined target value, and to be decreased when the is lower than the predetermined target value.
机译:在用于在基板上形成膜的成膜装置中使用的原料气体供给方法包括:将载气供给到容纳液体或固体原料的原料容器的内部所限定的气相区域,使原料气化,通过原料气体供给路径从原料容器向成膜装置供给包含气化原料的原料气体,测定流过原料气体供给路径的气化原料的流量,并比较该流量。通过流量测量单元获得的汽化原料具有预定的目标值,并控制当流量大于预定的目标值时增加原料容器的内部压力,并在流量大于目标值时降低原料容器的内部压力。低于预定目标值。

著录项

  • 公开/公告号JP5949586B2

    专利类型

  • 公开/公告日2016-07-06

    原文格式PDF

  • 申请/专利权人 東京エレクトロン株式会社;

    申请/专利号JP20130017491

  • 发明设计人 井上 三也;高堂 真;

    申请日2013-01-31

  • 分类号H01L21/31;C23C16/448;

  • 国家 JP

  • 入库时间 2022-08-21 14:40:15

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