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Raw material gas supply device, a film forming apparatus, supply method and storage medium of the raw material gas

机译:原料气体的供给装置,成膜装置,原料气体的供给方法以及存储介质

摘要

PROBLEM TO BE SOLVED: To provide a source gas supply device or the like for stably supplying source gas of a previously set concentration to a film-deposition treatment section.;SOLUTION: A source gas supply device is used in a film deposition apparatus for depositing a film on a substrate W. A source container 3 stores a source such as liquid, and carrier gas supply sections 51 and 52 supply carrier gas to a space for storing the source in the source container 3. An extracting section 310 extracts source gas from the source container 3, and dilution gas supply sections 41 and 42 supply dilution gas to be mixed into the source gas. Based on the concentration of the source gas after dilution detected by a concentration detecting section 2, a control section 6 adjusts the flow ratio of the carrier gas or dilution gas while keeping the total flow rate of the source gas after dilution within a preset range, and adjusts the temperature so that the temperature of the source gas after the dilution gas is mixed is higher than the liquifaction temperature or the like of the source.;COPYRIGHT: (C)2014,JPO&INPIT
机译:解决的问题:提供一种用于将预先设定的浓度的稳定地稳定地供给到成膜处理部的原料气体供给装置等。解决方法:在成膜装置中使用原料气体供给装置进行成膜。源容器3在基板W上成膜。源容器3存储液体等源,载气供给部51、52将载气供给到在源容器3中存储该源的空间。提取部310从源容器3中提取源气体。原料容器3,稀释气体供给部41、42供给与原料气体混合的稀释气体。控制部6基于由浓度检测部2检测出的稀释后的原料气体的浓度,在将稀释后的原料气体的总流量保持在预定范围内的同时,调整载气或稀释气体的流量比。并调节温度,使稀释气体混合后的原料气温度高于原料气的液化温度或类似温度。;版权所有:(C)2014,JPO&INPIT

著录项

  • 公开/公告号JP5895712B2

    专利类型

  • 公开/公告日2016-03-30

    原文格式PDF

  • 申请/专利权人 東京エレクトロン株式会社;

    申请/专利号JP20120124713

  • 发明设计人 和村 有;島 裕巳;

    申请日2012-05-31

  • 分类号C23C16/455;H01L21/31;H01L21/285;

  • 国家 JP

  • 入库时间 2022-08-21 14:40:10

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