首页> 外国专利> Diamond crystal growth method and a diamond crystal growth apparatus

Diamond crystal growth method and a diamond crystal growth apparatus

机译:金刚石晶体生长方法和金刚石晶体生长装置

摘要

PROBLEM TO BE SOLVED: To provide a method and an apparatus for growing a diamond crystal where solid conversion efficiency from a raw material gas to the crystal is enhanced.;SOLUTION: In the method for growing the diamond crystal that the diamond crystal is grown on a substrate 71 from the raw material gas in a reaction chamber 11 by a chemical vapor deposition method, the raw material gas is supplied into the reaction chamber 11 at a raw material gas supplying flow rate G0 satisfied with equation (1): G0≤10×S×h (wherein, S is the area of a substrate; and h is a crystal growing rate) and exhausting from the reaction chamber 11 is performed at an exhausting flow rate G2 satisfied with equation (2): G2≤0.90×G0. The concentration of the raw material gas is optimized and crystallization efficiency is enhanced by using the method for growing the diamond crystal, the recovery efficiency of the raw material is enhanced by suppressing the exhausting of an unreacted raw material gas and then the solid conversion efficiency from the raw material gas to the diamond crystal can be enhanced.;COPYRIGHT: (C)2013,JPO&INPIT
机译:解决的问题:提供一种用于生长金刚石晶体的方法和装置,其中提高了从原料气体到晶体的固体转化效率。解决方案:在用于生长金刚石晶体的方法中,在其上生长金刚石晶体。基板71通过化学气相沉积法从反应室11中的原料气体中,以满足以下条件的原料气体供给流量G 0 供给到反应室11中:式(1):G 0 ≤10×S×h(其中,S是基板的面积; h是晶体的生长速度),并从反应室11中排出。排气流量G 2 满足方程式(2):G 2 ≤0.90×G 0 。通过使用该金刚石晶体的生长方法,使原料气体的浓度最优化,结晶效率提高,通过抑制未反应的原料气体的排出,进而抑制固体成分转化效率,从而提高了原料的回收率。版权所有:(C)2013,日本特许厅&INPIT

著录项

  • 公开/公告号JP5822259B2

    专利类型

  • 公开/公告日2015-11-24

    原文格式PDF

  • 申请/专利号JP20110134198

  • 发明设计人 寺地 徳之;

    申请日2011-06-16

  • 分类号C30B29/04;C23C16/27;C23C16/455;

  • 国家 JP

  • 入库时间 2022-08-21 14:40:06

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号