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INTEGRATED CIRCUIT STRUCTURES WITH SPIN TORQUE TRANSFER MAGNETIC RANDOM ACCESS MEMORY HAVING INCREASED MEMORY CELL DENSITY AND METHODS FOR FABRICATING THE SAME
INTEGRATED CIRCUIT STRUCTURES WITH SPIN TORQUE TRANSFER MAGNETIC RANDOM ACCESS MEMORY HAVING INCREASED MEMORY CELL DENSITY AND METHODS FOR FABRICATING THE SAME
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机译:具有自旋扭矩传递磁性随机访问存储器的集成电路结构,其存储器单元密度增加,并且制造方法相同
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摘要
STT-MRAM integrated circuit and method for fabricating the same are disclosed. An integrated circuit includes a word line layer, a bit line layer, and an MRAM stack in contact with the bit line metal layer. The integrated circuit further includes a first doped silicon layer in contact with the MRAM stack, the first doped silicon layer including conductivity-determining ions of a first type, and a second doped silicon layer in contact with the first doped silicon layer and further in contact with the word line layer, the second doped silicon layer including conductivity-determining ions of a second type that is opposite the first type. Still further, the integrated circuit includes a third doped silicon layer in contact with the second doped silicon layer and a source line layer in electrical contact with the third doped silicon layer.
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